Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications

Abstract The advancement in technology semiconductor materials significantly contributed improvement of human life by bringing breakthrough fabrication optoelectronics and power devices which have wide applications medicine communication. Gallium Arsenide (GaAs) Nitride (GaN) are versatile for such but with relative merits demerits. GaAs transistors suitable both narrowband wideband due to very operating frequency range (30 MHz millimetre-wave frequencies as high 250 GHz). They highly sensitive, generate little internal noise density typically around 1.5 W/mm. But low break down voltage (5x10 5 V/cm), output (5-10W) inability withstand higher temperatures the main limitations. On other hand, GaN possess improved physical chemical characteristics, power, temperature (1000°C vacuum), fast heat dissipation, breakdown (4x10 6 (5-12W/mm), characteristics large band gap (3.4eV) allow significant reduction devise size. Also increases overall impedance make it matching process enables efficient operation broad region. present paper critically analyses semiconductors relation their properties, them communication, space medicine.